Thermal Management, Packaging, and Electro-thermal Co-design of Wide- and Ultra-Wide-Bandgap Power Devices
Neha Singh *
Department of Electronics and Communication Engineering, Govind Ballabh Pant University of Agriculture and Technology, Pantnagar, Uttarakhand 263145, India.
Deep Sehgal
Semiconductor Laboratory (SCL), Ministry of Electronics and Information Technology (MeitY), New Delhi, India.
*Author to whom correspondence should be addressed.
Abstract
Background: Wide- and ultra-wide-bandgap (WBG/UWBG) power devices offer higher blocking-field capabilities and faster switching, but increasing power density presents significant thermal management and packaging challenges. Heat dissipation depends on semiconductor properties, thermal interfaces, package geometry and cooling conditions. However, translating material- and interface-level thermal improvements into reliable device and converter performance remains challenging because of differences in operating conditions and electro-thermal constraints.
Aims: To assess thermal transport, packaging and electro-thermal co-design constraints in WBG/UWBG power devices.
Study Design: Focused narrative review.
Methodology: Thirty journal articles were compared by structure, measurement or modelling methods, operating conditions and evidence limitations. The search was updated on 7 August 2026.
Findings: Interfaces, anisotropy, package geometry and duty cycle can outweigh bulk conductivity advantages. Thermal improvements can coexist with electrical degradation. Interface measurements, simulations and pulsed demonstrations do not establish continuous converter performance or service life.
Conclusion: Coupled thermal, electrical and packaging assessment is essential. The priority gaps are matched-condition comparisons, manufacturing variability and durability under representative converter operation.
Keywords: Wide-bandgap semiconductors, ultra-wide-bandgap semiconductors, thermal management, power electronics, gallium oxide, diamond